1/9 february 2002 STP11NM60FD STP11NM60FDfp n-channel 600v - 0.40 w - 11a to-220 / to-220fp fdmesh?power mosfet (with fast diode) (1)i sd <11a, di/dt<400a/ s, v dd STP11NM60FD STP11NM60FDfp 600 v 600 v < 0.45 w < 0.45 w 11 a 11 a symbol parameter value unit STP11NM60FD STP11NM60FDfp v ds drain-source voltage (v gs = 0) 600 v v dgr drain-gate voltage (r gs = 20 k w ) 600 v v gs gate- source voltage 30 v i d drain current (continuos) at t c = 25c 11 11 (*) a i d drain current (continuos) at t c = 100c 7 7 (*) a i dm ( l ) drain current (pulsed) 44 44 (*) a p tot total dissipation at t c = 25c 160 35 w derating factor 0.88 0.28 w/c dv/dt peak diode recovery voltage slope 20 v/ns v iso insulation winthstand voltage (dc) -- 2500 v t stg storage temperature C65 to 150 c t j max. operating junction temperature to-220 1 2 3 1 2 3 to-220fp internal schematic diagram
STP11NM60FD - STP11NM60FDfp 2/9 thermal data avalanche characteristics electrical characteristics (tcase = 25 c unless otherwise specified) off on (1) dynamic 1. pulsed: pulse duration = 300 s, duty cycle 1.5 %. 2. c oss eq. is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss . to-220 to-220fp rthj-case thermal resistance junction-case max 0.78 3.57 c/w rthj-amb thermal resistance junction-ambient max 62.5 c/w t l maximum lead temperature for soldering purpose 300 c symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 5.5 a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 35 v) 350 mj symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 600 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating 1a v ds = max rating, t c = 125 c 100 a i gss gate-body leakage current (v ds = 0) v gs = 30v 100 na symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs , i d = 250a 345v r ds(on) static drain-source on resistance v gs = 10v, i d = 5.5a 0.40 0.45 w symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds > i d(on) x r ds(on)max, i d = 5.5a 5.2 s c iss input capacitance v ds = 25v, f = 1 mhz, v gs = 0 1000 pf c oss output capacitance 208 pf c rss reverse transfer capacitance 28 pf c oss eq. (2) equivalent output capacitance v gs = 0v, v ds = 0v to 400v 100 pf r g gate input resistance f=1 mhz gate dc bias = 0 test signal level = 20mv open drain 3 w
3/9 STP11NM60FD - STP11NM60FDfp safe operating area for to-220 electrical characteristics (continued) switching on switching off source drain diode note: 1. pulsed: pulse duration = 300 s, duty cycle 1.5 %. 2. pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 250v, i d = 5.5a r g = 4.7 w v gs = 10v (see test circuit, figure 3) 20 ns t r rise time 16 ns q g total gate charge v dd = 400v, i d = 11a, v gs = 10v 28 40 nc q gs gate-source charge 7.8 nc q gd gate-drain charge 13 nc symbol parameter test conditions min. typ. max. unit t r(voff) off-voltage rise time v dd = 400v, i d = 11a, r g = 4.7 w, v gs = 10v (see test circuit, figure 5) 10 ns t f fall time 15 ns t c cross-over time 24 ns symbol parameter test conditions min. typ. max. unit i sd source-drain current 11 a i sdm (2) source-drain current (pulsed) 44 a v sd (1) forward on voltage i sd = 11a, v gs = 0 1.5 v t rr reverse recovery time i sd = 11a, di/dt = 100a/s, v dd = 50v (see test circuit, figure 5) 190 ns q rr reverse recovery charge 1.1 c i rrm reverse recovery current 14.5 a safe operating area for to-220fp
STP11NM60FD - STP11NM60FDfp 4/9 thermal impedance for to-220fp thermal impedance for to-220 transconductance static drain-source on resistance transfer characteristics output characteristics
5/9 STP11NM60FD - STP11NM60FDfp gate charge vs gate-source voltage capacitance variations source-drain diode forward characteristics normalized on resistance vs temperature normalized gate thereshold voltage vs temp.
STP11NM60FD - STP11NM60FDfp 6/9 fig. 5: test circuit for inductive load switching and diode recovery times fig. 4: gate charge test circuit fig. 2: unclamped inductive waveform fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuit for resistive load
7/9 STP11NM60FD - STP11NM60FDfp dim. mm inch min. typ. max. min. typ. max. a 4.40 4.60 0.173 0.181 c 1.23 1.32 0.048 0.051 d 2.40 2.72 0.094 0.107 d1 1.27 0.050 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.067 f2 1.14 1.70 0.044 0.067 g 4.95 5.15 0.194 0.203 g1 2.4 2.7 0.094 0.106 h2 10.0 10.40 0.393 0.409 l2 16.4 0.645 l4 13.0 14.0 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.2 6.6 0.244 0.260 l9 3.5 3.93 0.137 0.154 dia. 3.75 3.85 0.147 0.151 l6 a c d e d1 f g l7 l2 dia. f1 l5 l4 h2 l9 f2 g1 to-220 mechanical data p011c
STP11NM60FD - STP11NM60FDfp 8/9 l2 a b d e h g l6 f l3 g1 123 f2 f1 l7 l4 l5 dim. mm. inch min. typ max. min. typ. max. a 4.4 4.6 0.173 0.181 b 2.5 2.7 0.098 0.106 d 2.5 2.75 0.098 0.108 e 0.45 0.7 0.017 0.027 f 0.75 1 0.030 0.039 f1 1.15 1.5 0.045 0.067 f2 1.15 1.5 0.045 0.067 g 4.95 5.2 0.195 0.204 g1 2.4 2.7 0.094 0.106 h 10 10.4 0.393 0.409 l2 16 0.630 l3 28.6 30.6 1.126 1.204 l4 9.8 10.6 .0385 0.417 l5 2.9 3.6 0.114 0.141 l6 15.9 16.4 0.626 0.645 l7 9 9.3 0.354 0.366 ? 3 3.2 0.118 0.126 to-220fp mechanical data
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